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Electrical conductivity and thermopower of Cu–SiO[sub 2] nanogranular films.
Applied Physics Letters (2002)
  • W. Chen
  • J. J. Lin
  • X. X. Zhang
  • H. K. Shin
  • Jeffrey S. Dyck, John Carroll University
  • C. Uher

We have measured the thermopower S and electrical conductivity σ in a series of Cu[sub x](SiO[sub 2])[sub 1-x] nanogranular films between 2 and 300 K with Cu volume fraction x varying from 0.43 up to 1.0. At low temperatures, disorder-enhanced electron-electron interaction effects dictate the behavior of σ. A crossover of the temperature dependence from σ∝ √T to σ∝ T[sup 1/3] is observed as x is lowered and the metal-insulator transition is approached. S is small, shows linear temperature dependence, and is rather insensitive to the change of x. Effects of annealing are also discussed.

Publication Date
July 15, 2002
Publisher Statement
©2002 American Institute of Physics DOI: 10.1063/1.1493668
Citation Information
W. Chen, J. J. Lin, X. X. Zhang, H. K. Shin, et al.. "Electrical conductivity and thermopower of Cu–SiO[sub 2] nanogranular films." Applied Physics Letters Vol. 81 Iss. 3 (2002)
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