An analysis of the channel thermal noise in MOSFET's, based on the one-dimensional charge sheet model, is presented. The analytical expression is valid in the strong, moderate, and weak inversion regions. The body effect on the device parameters relevant to the thermal noise is discussed. A measurement technique as well as experimental results of P- and N-MOSFET's of a 1.2 µm radiation hard CMOS process are presented. The calculated channel thermal noise coefficient gamma as in id2/Δf=4kT γ gdo agrees well with experimental data for effective device channel length as short as 1.7µm.
- radiation hard CMOS,
- noise measurement.
Available at: http://works.bepress.com/jan_vanderspiegel/19/