Spin-dependent electron transport in C and Ge doped BN monolayerPhysical Chemistry Chemical Physics (2017)
Recent advances in the synthesis and characterization of h-BN monolayers offer opportunities to tailor their electronic properties via aliovalent substitutions in the lattice. In this paper, we consider a h-BN monolayer doped with C or Ge, and find that dopants modify the Fermi level of the pristine monolayer. Three-fold coordinated dopants relax to the convex-shaped structures, while four-fold coordinated ones retain the planar structures. These modifications, in turn, lead to unique features in the electron transport characteristics including significant enhancement of current at the dopant site, diode-like asymmetric current–voltage response, and spin-dependent current. We find that the spin-polarized transport properties of the doped BN monolayers could be used for the next-generation devices at the nanoscale.
Citation InformationSanjeev K. Gupta, Haiying He, Igor Lukačević and Ravindra Pandey. "Spin-dependent electron transport in C and Ge doped BN monolayer" Physical Chemistry Chemical Physics Vol. 19 (2017) p. 30370
Available at: http://works.bepress.com/haiying-he/7/