Skip to main content
Spin-dependent electron transport in C and Ge doped BN monolayer
Physical Chemistry Chemical Physics (2017)
  • Sanjeev K. Gupta, Michigan Technological University
  • Haiying He, Prof., Valparaiso University
  • Igor Lukačević, Michigan Technological University
  • Ravindra Pandey, Michigan Technological University
Recent advances in the synthesis and characterization of h-BN monolayers offer opportunities to tailor their electronic properties via aliovalent substitutions in the lattice. In this paper, we consider a h-BN monolayer doped with C or Ge, and find that dopants modify the Fermi level of the pristine monolayer. Three-fold coordinated dopants relax to the convex-shaped structures, while four-fold coordinated ones retain the planar structures. These modifications, in turn, lead to unique features in the electron transport characteristics including significant enhancement of current at the dopant site, diode-like asymmetric current–voltage response, and spin-dependent current. We find that the spin-polarized transport properties of the doped BN monolayers could be used for the next-generation devices at the nanoscale.
Publication Date
Citation Information
Sanjeev K. Gupta, Haiying He, Igor Lukačević and Ravindra Pandey. "Spin-dependent electron transport in C and Ge doped BN monolayer" Physical Chemistry Chemical Physics Vol. 19 (2017) p. 30370
Available at: