Article
Femtosecond Laser-induced Silicon Surface Morphology in Water Confinement
Microsystem Technologies
Abstract
This article investigates the use of femtosecond laser induced surface morphology on silicon wafer surface in water confinement. Unlike irradiation of silicon surfaces in the air, there are no laser induced periodic structures, but irregular roughness is formed when the silicon wafer is ablated under water. The unique discovery of a smoothly processed silicon surface in water confinement under certain laser parameter combinations may help improve laser direct micromachining surface quality in industrial applications.
Department(s)
Electrical and Computer Engineering
Second Department
Mechanical and Aerospace Engineering
Keywords and Phrases
- Femtosecond Laser,
- Laser Induced Periodic Structures,
- Laser Parameters,
- Lasers,
- Morphology,
- Pulsed Laser Applications,
- Semiconducting Silicon Compounds,
- Silicon Surface Morphology,
- Silicon Surfaces,
- Silicon Wafers,
- Silicon Water Surfaces,
- Surface Morphology,
- Surface Qualities
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2009 Springer-Verlag, All rights reserved.
Publication Date
7-1-2009
Publication Date
01 Jul 2009
Citation Information
Han Yukun, Cheng-Hsiang Lin, Hai Xiao and Hai-Lung Tsai. "Femtosecond Laser-induced Silicon Surface Morphology in Water Confinement" Microsystem Technologies (2009) ISSN: 0946-7076 Available at: http://works.bepress.com/hai-lung-tsai/79/