This paper studied the effects of thin-film ferroelectrics as decoupling capacitors for electromagnetic compatibility applications. The impedance and insertion loss of PZT capacitors were measured and compared with the results from commercial off-the-shelf capacitors. An equivalent circuit model was extracted from the experimental results, and a considerable series resistance was found to exist in ferroelectric capacitors. This resistance gives rise to the observed performance difference around series resonance between ferroelectric PZT capacitors and normal capacitors. Measurements on paraelectric (Ba,Sr)TiO3-based integrated varactors do not show this significant resistance. Some analyses were made to investigate the mechanisms, and it was found that it can be due to the hysteresis in the ferroelectric thin films.
- barium compounds;dielectric hysteresis;electric impedance;ferroelectric capacitors;ferroelectric thin films;lead compounds;strontium compounds;thin film capacitors;varactors;(BaSr)TiO3;EMC decoupling;PZT;electromagnetic compatibility;equivalent circuit model;ferroelectric hysteresis;impedance;insertion loss;paraelectric based integrated varactors;series resistance;thin-film ferroelectric capacitors;Capacitors;Electrical resistance measurement;Electromagnetic compatibility;Electromagnetic measurements;Ferroelectric materials;Impedance measurement;Insertion loss;Loss measurement;Thin film circuits;Transistors;Algorithms;Barium Compounds;Electric Capacitance;Electrochemistry;Electromagnetic Phenomena;Ferric Compounds;Oxides;Strontium;Titanium
Available at: http://works.bepress.com/guru_subramanyam/21/