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Article
Selective Area Deposited Blue GaN-InGaN Multiple-Quantum Well Light Emitting Diodes over Silicon Substrates
Applied Physics Letters
  • J. W. Yang
  • A. Lunev
  • Grigory Simin, University of South Carolina - Columbia
  • A. Chitnis
  • M. Shatalov
  • M. Asif Khan
  • Joseph E. Van Nostrand
  • R. Gaska
Publication Date
1-17-2000
Document Type
Article
Abstract

We report on fabrication and characterization of blue GaN–InGaN multi-quantum well (MQW)light-emitting diodes(LEDs) over (111) silicon substrates. Device epilayers were fabricated using unique combination of molecular beam epitaxy and low-pressure metalorganic chemical vapor depositiongrowth procedure in selective areas defined by openings in a SiO2mask over the substrates. This selective area deposition procedure in principle can produce multicolor devices using a very simple fabrication procedure. The LEDs had a peak emission wavelength of 465 nm with a full width at half maximum of 40 nm. We also present the spectral emission data with the diodes operating up to 250 °C. The peak emission wavelengths are measured as a function of both dc and pulse bias current and plate temperature to estimate the thermal impedance.

Citation Information
J. W. Yang, A. Lunev, Grigory Simin, A. Chitnis, et al.. "Selective Area Deposited Blue GaN-InGaN Multiple-Quantum Well Light Emitting Diodes over Silicon Substrates" Applied Physics Letters Vol. 76 Iss. 3 (2000) p. 273 - 275
Available at: http://works.bepress.com/grigory_simin/74/