Near-Band-Edge Photoluminescence of Wurtzite-Type AlNApplied Physics Letters
AbstractTemperature-dependentphotoluminescence(PL)measurements were performed for A-plane and C-plane bulk AlN single crystals and epitaxial layers on sapphire. A strong near-band-edge (NBE) emission and deep-level luminescence were observed. At low excitations, the emission spectra are dominated by free and bound excitonic transitions and their LO-phonon replicas. At high excitations, the broadening and redshift of the NBE band is attributed to dense electron–hole plasma formation. The PL spectra differences of bulk single crystals and epilayers is explained by the electron–hole plasma expansion peculiarities.
Citation InformationE. Kuokstis, J. Zhang, Q. Fareed, J. W. Yang, et al.. "Near-Band-Edge Photoluminescence of Wurtzite-Type AlN" Applied Physics Letters Vol. 81 Iss. 15 (2002) p. 2755 - 2757
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