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Electronically Induced Ferromagnetic Transitions in Sm5Ge4-Type Magnetoresponsive Phases
Physical Review Letters
  • Jinlei Yao, Suzhou University of Science and Technology
  • Yuemei Zhang, Iowa State University
  • Peng L. Wang, McMaster University
  • Laura Lutz-Kappelman, Iowa State University
  • Gordon J. Miller, Iowa State University
  • Yurij Mozharivskyj, McMaster University
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The correlation between magnetic and structural transitions in Gd5SixGe4−x hampers the studies of valence electron concentration (VEC) effects on magnetism. Such studies require decoupling of the VEC-driven changes in the magnetic behavior and crystal structure. The designed compounds, Gd5GaSb3 and Gd5GaBi3, adopt the same Sm5Ge4-type structure as Gd5Ge4 while the VEC increases from 31  e−/formula in Gd5Ge4 to 33  e−/formula in Gd5GaPn3 (Pn: pnictide atoms). As a result, the antiferromagnetic ground state in Gd5Ge4 is tuned into the ferromagnetic one in Gd5GaPn3. First-principles calculations reveal that the nature of interslab magnetic interactions is changed by introducing extra p electrons into the conduction band, forming a ferromagnetic bridge between the adjacent [∝2Gd5T4] slabs.


This article is from Physical Review Letters 110 (2013): 1, doi:10.1103/PhysRevLett.110.077204. Posted with permission.

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American Physical Society
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Jinlei Yao, Yuemei Zhang, Peng L. Wang, Laura Lutz-Kappelman, et al.. "Electronically Induced Ferromagnetic Transitions in Sm5Ge4-Type Magnetoresponsive Phases" Physical Review Letters Vol. 10 Iss. 077204 (2013) p. 1017 - 5
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