Electrical resistivity, electronic heat capacity, and electronic structure of Gd5Ge4Physical Review B
Publication VersionPublished Version
AbstractTemperature and dc magnetic-field dependencies of the electrical resistivity (4.3–300 K, 0–40 kOe) and heat capacity (3.5–14 K, 0–100 kOe) of polycrystalline Gd5Ge4 have been measured. The electrical resistivity of Gd5Ge4 shows a transition between the low-temperature metallic and high-temperature insulatorlike states at ∼130 K. In the low-temperature metallic state both the resistivity and electronic heat capacity of Gd5Ge4 indicate a possible presence of a narrow conduction band. Both low- and high-temperature behaviors of the electrical resistivity of Gd5Ge4 correlate with the crystallographic and magnetic phase transitions induced by temperature and/or magnetic field. Several models, which can describe the unusual behavior of the electrical resistance of Gd5Ge4 above 130 K, are discussed. Preliminary tight-binding linear muffin-tin orbital calculations show that Gd5Ge4 behaves as a metal in the low-temperature magnetically ordered state, and as a Mott-Hubbard “semiconductor” in the high-temperature magnetically disordered state.
Copyright OwnerAmerican Physical Society
Citation InformationE.M. Levin, Vitalij K. Pecharsky, Karl A. Gschneidner and Gordon J. Miller. "Electrical resistivity, electronic heat capacity, and electronic structure of Gd5Ge4" Physical Review B Vol. 64 Iss. 235103 (2001) p. 1 - 11
Available at: http://works.bepress.com/gordon-miller/34/