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Article
Anisotropy and large magnetoresistance in the narrow-gap semiconductor FeSb2
Physical Review B
  • Cedomir Petrovic, Iowa State University
  • J.W. Kim, Iowa State University
  • Sergey L. Bud'ko, Iowa State University
  • A. I. Goldman, Iowa State University
  • Paul C. Canfield, Iowa State University
  • Wonyoung Choe, Iowa State University
  • Gordon J. Miller, Iowa State University
Document Type
Article
Publication Version
Published Version
Publication Date
1-1-2003
DOI
10.1103/PhysRevB.67.155205
Abstract

A study of the anisotropy in magnetic, transport, and magnetotransport properties of FeSb2 has been made on large single crystals grown from Sb flux. Magnetic susceptibility of FeSb2 shows diamagnetic to paramagnetic crossover around 100 K. Electrical transport along two axes is semiconducting, whereas the third axis exhibits a metal-semiconductor crossover at temperature Tcr which is sensitive to current alignment and ranges between 40 and 80 K. In H=70kOe semiconducting transport is restored for T<300K, resulting in large magnetoresistance [ρ(70kOe)−ρ(0)]/ρ(0)=2200% in the crossover temperature range.

Comments

This article is from Physical Review B 67 (2003): 1, doi:10.1103/PhysRevB.67.155205. Posted with permission.

Copyright Owner
American Physical Society
Language
en
File Format
application/pdf
Citation Information
Cedomir Petrovic, J.W. Kim, Sergey L. Bud'ko, A. I. Goldman, et al.. "Anisotropy and large magnetoresistance in the narrow-gap semiconductor FeSb2" Physical Review B Vol. 67 Iss. 155205 (2003) p. 1 - 11
Available at: http://works.bepress.com/gordon-miller/17/