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Performance Analysis of a Ge/Si Core/Shell Nanowire Field-Effect Transistor
Birck and NCN Publications
  • Gengchiau Liang, Harvard University
  • Jie Xiang, Harvard University
  • Neerav Kharche, Purdue University - Main Campus
  • Gerhard Klimeck, Purdue University - Main Campus
  • Charles M. Lieber, Harvard University
  • Mark Lundstrom, Purdue University - Main Campus
Abstract
We ana/lyze the performance of a recently reported Ge/Si core/shell nanowire transistor using a semiclassical, ballistic transport model and an sp3d5s* tight-binding treatment of the electronic structure. Comparison of the measured performance of the device with the effects of series resistance removed to the simulated result assuming ballistic transport shows that the experimental device operates between 60 and 85% of the ballistic limit. For this !15 nm diameter Ge nanowire, we also find that 14−18 modes are occupied at room temperature under ON-current conditions with ION/IOFF ) 100. To observe true one-dimensional transport in a 〈110〉Ge nanowire transistor, the nanowire diameter would have to be less than about 5 nm. The methodology described here should prove useful for analyzing and comparing on a common basis nanowire transistors of various materials and structures.
Date of this Version
7-15-2007
Citation
Nano Letters 207 Vol. 7, No. 3, 642-646
Citation Information
Gengchiau Liang, Jie Xiang, Neerav Kharche, Gerhard Klimeck, et al.. "Performance Analysis of a Ge/Si Core/Shell Nanowire Field-Effect Transistor" (2007)
Available at: http://works.bepress.com/gerhard_klimeck/84/