Field-Effect Transistors with Doped Reservoirs and Realistic GeometryOther Nanotechnology Publications
AbstractThe authors would like to make corrections to some results presented in IEEE Trans. Electron Devices, Vol. 53, No. 8, pp. 1782-1733, Aug. 2006.
Date of this Version4-1-2008
Citation InformationGianluca Fiori, Giuseppe Iannaccone and Gerhard Klimeck. "Field-Effect Transistors with Doped Reservoirs and Realistic Geometry" (2008)
Available at: http://works.bepress.com/gerhard_klimeck/28/