Noninvasive Spatial Metrology of Single-Atom DevicesNANO LETTERS
AbstractThe exact location of a single dopant atom in a nanostructure can influence or fully determine the functionality of highly scaled transistors or spin-based devices. We demonstrate here a noninvasive spatial metrology technique, based on the microscopic modeling of three electrical measurements on a single-atom (phosphorus in silicon) spin qubit device: hyperfine coupling, ground state energy, and capacitive coupling to nearby gates. This technique allows us to locate the qubit atom with a precision of +/- 2.5 nm in two directions and +/- 15 nm in the third direction, which represents a 1500-fold improvement with respect to the prefabrication statistics obtainable from the ion implantation parameters.
- P-31 donors in Si; quantum computing; ion implantation; donor location uncertainty; nanoelectronic modeling; triangulation; ELECTRON-SPIN; ATOMISTIC SIMULATION; NEMO 3-D; SILICON; TRANSISTOR; RESONANCE; READOUT; DONORS; QUBIT
Date of this Version5-1-2013
Citation InformationFahd A. Mohiyaddin, Rajib Rahman, Rachpon Kalra, Gerhard Klimeck, et al.. "Noninvasive Spatial Metrology of Single-Atom Devices" NANO LETTERS (2013)
Available at: http://works.bepress.com/gerhard_klimeck/27/