Computational Aspects of the Three-Dimensional Feature-Scale Simulation of Silicon-Nanowire Field-Effect Sesnsors for DNA DetectionBirck and NCN Publications
AbstractIn recent years DNA-sensors, and generally biosensors, with semiconducting transducers were fabricated and characterized. Although the concept of so-called BioFETs was proposed already two decades ago, its realization has become feasible only recently due to advances in process technology. In this paper a comprehensive and rigorous approach to the simulation of silicon-nanowire DNAFETs at the feature-scale is presented. It allows to investigate the feasibility of single-molecule detectors and is used to elucidate the performance that can be expected from sensors with nanowire diameters in the deca-nanometer range. Finally the computational challenges for the simulation of silicon-nanowire DNAsensors are discussed.
Date of this Version1-18-2007
CitationJ Comput Electron (2007) 6:387-390
Citation InformationClemens Heitzinger and Gerhard Klimeck. "Computational Aspects of the Three-Dimensional Feature-Scale Simulation of Silicon-Nanowire Field-Effect Sesnsors for DNA Detection" (2007)
Available at: http://works.bepress.com/gerhard_klimeck/253/