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Computational Aspects of the Three-Dimensional Feature-Scale Simulation of Silicon-Nanowire Field-Effect Sesnsors for DNA Detection
Birck and NCN Publications
  • Clemens Heitzinger, Purdue University - Main Campus
  • Gerhard Klimeck, Purdue University - Main Campus
Abstract
In recent years DNA-sensors, and generally biosensors, with semiconducting transducers were fabricated and characterized. Although the concept of so-called BioFETs was proposed already two decades ago, its realization has become feasible only recently due to advances in process technology. In this paper a comprehensive and rigorous approach to the simulation of silicon-nanowire DNAFETs at the feature-scale is presented. It allows to investigate the feasibility of single-molecule detectors and is used to elucidate the performance that can be expected from sensors with nanowire diameters in the deca-nanometer range. Finally the computational challenges for the simulation of silicon-nanowire DNAsensors are discussed.
Keywords
  • DNAFET,
  • BioFET,
  • Simulation,
  • Silicon-nanowire
Date of this Version
1-18-2007
Citation
J Comput Electron (2007) 6:387-390
Citation Information
Clemens Heitzinger and Gerhard Klimeck. "Computational Aspects of the Three-Dimensional Feature-Scale Simulation of Silicon-Nanowire Field-Effect Sesnsors for DNA Detection" (2007)
Available at: http://works.bepress.com/gerhard_klimeck/253/