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Quantum Confined Stark Shift and Ground State Optical Transition Rat in [100] Laterally Biased InAs/GaAs Quantum Dots
Birck and NCN Publications
  • Muhammad Usman, Purdue University - Main Campus
  • Hoon Ryu, Purdue University - Main Campus
  • Sunhee Lee, Purdue University - Main Campus
  • Yui H. Tan, Purdue University - Main Campus
  • Gerhard Klimeck, Purdue University - Main Campus
The atomistic tight binding simulator NEMO 3-D has previously been validated against the experimental data for quantum dots, wells, and wires in the InGaAlAs and SiGe material systems. Here, we demonstrate our new capability to compute optical matrix elements and transition strengths in tight binding. Systematic multi-million atom electronic structure calculations explore the quantum confined stark shift and the ground state optical transition rate for an electric field in the lateral [100] direction. The simulations treat the strain in a ~15 million atom system and the electronic structure in a subset of ~9 million atoms. The effects of the long range strain, the optical polarization anisotropy, the interface roughness, and the nondegeneracy of the p-states which are missing in continuum methods like effective mass approximation or k•p are included. A significant red shift in the emission spectra due to an applied inplane electric field indicating a strong quantum confined stark effect (QSCE) is observed. The ground state optical transition rate rapidly decreases with the increasing electric field magnitude due to reduced spatial overlap of ground electron and hole states.
  • Stark effect,
  • Strain,
  • Quantum Dot,
  • lateral field,
  • transition rate
Date of this Version
to appear in IEEE Proceedings of the 13th International Workshop on Computational Electronics, Tsinghua University, Beijing, May 27-29, 2009
Citation Information
Muhammad Usman, Hoon Ryu, Sunhee Lee, Yui H. Tan, et al.. "Quantum Confined Stark Shift and Ground State Optical Transition Rat in [100] Laterally Biased InAs/GaAs Quantum Dots" (2009)
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