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Gate-induced g-factor control and dimensional transition for donors in multivalley semiconductors
Birck and NCN Publications
  • Rajib Rahman, Purdue University - Main Campus
  • Seung H Park, Purdue University - Main Campus
  • Timothy B Boykin, University of Alabama - Huntsville
  • Gerhard Klimeck, Network for Computational Nanotechnology, Purdue University
  • Sven Rogge, Delft Univ Technol, Kavli Inst Nanosci
  • Lloyd CL Hollenberg, Univ Melbourne, Sch Phys, Ctr Quantum Comp Technol
The dependence of the g factors of semiconductor donors on applied electric and magnetic fields is of immense importance in spin-based quantum computation and in semiconductor spintronics. The donor g-factor Stark shift is sensitive to the orientation of the electric and magnetic fields and is strongly influenced by the band-structure and spin-orbit interactions of the host. Using a multimillion atom tight-binding framework, the spin-orbit Stark parameters are computed for donors in multivalley semiconductors, silicon, and germanium. Comparison with limited experimental data shows good agreement for a donor in silicon. Results for gate-induced transition from three-dimensional to two-dimensional wave-function confinement show that the corresponding g-factor shift in Si is experimentally observable, and at modest B field, O(1 T) can exceed the Stark shift of the hyperfine interaction.
Date of this Version
DOI: 10.1103/PhysRevB.80.155301
Citation Information
Rajib Rahman, Seung H Park, Timothy B Boykin, Gerhard Klimeck, et al.. "Gate-induced g-factor control and dimensional transition for donors in multivalley semiconductors" (2009)
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