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Characterization and Modeling of Subfemotofarad Nanowire Capacitance Using the CBCM Technique
Birck and NCN Publications
  • Hui Zhao, Purdue University - Main Campus
  • Raseong Kim, Purdue University - Main Campus
  • Abhijeet Paul, Purdue University - Main Campus
  • Mathieu Luisier, Purdue University - Main Campus
  • Gerhard Klimeck, Purdue University - Main Campus
  • Fa-Jun Ma, Purdue University - Main Campus
  • Subhash C. Rustagi, Purdue University - Main Campus
  • Ganesh S. Samudra, Purdue University - Main Campus
  • Navab Singh, Purdue University - Main Campus
  • Guo-Qiang Lo, Purdue University - Main Campus
  • Dim-Lee Kwong, Purdue University - Main Campus
Abstract
The experimental characterization of gate capacitance in nanoscale devices is challenging. We report an application of the charge-based capacitance measurement (CBCM) technique to measure the gate capacitance of a single-channel nanowire transistor. The measurement results are validated by 3-D electrostatic computations for parasitic estimation and 2-D self-consistent sp3s∗d5 tight-binding computations for intrinsic gate capacitance calculations. The device simulation domains were constructed based on SEM and TEM images of the experimental device. The carefully designed CBCM technique thus emerges as a useful technique formeasuring the capacitance and characterizing the transport in nanoscale devices.
Keywords
  • Charge-based capacitance measurement (CBCM),
  • nanowire MOSFETs,
  • self-consistent C-V modeling,
  • subfemtofarad-capacitance measurement
Date of this Version
5-15-2009
Citation
IEEE Electron Device Letters, Vol. 30, No. 5, May 2009, pp. 526-528.
Citation Information
Hui Zhao, Raseong Kim, Abhijeet Paul, Mathieu Luisier, et al.. "Characterization and Modeling of Subfemotofarad Nanowire Capacitance Using the CBCM Technique" (2009)
Available at: http://works.bepress.com/gerhard_klimeck/218/