This work focuses on the determination of the valid device domain for the use of the Top of the barrier (ToB) model to simulate quantum transport in nanowire MOSFETs in the ballistic regime. The presence of a proper Source/Drain barrier in the device is an important criterion for the applicability of the model. Long channel devices can be accurately modeled under low and high drain bias with DIBL adjustment.
- component; nanowires; top of the barrier; MOSFET; ballistic transport model; DIBL; tunneling current; top-of-the-barrier; subthreshold-slope; Tight-Binding; Short channel effects
Available at: http://works.bepress.com/gerhard_klimeck/195/