On the Validity of the Top of the Barrier Quantum Transport Model for Ballistic Nanowire MOSFETsBirck and NCN Publications
AbstractThis work focuses on the determination of the valid device domain for the use of the Top of the barrier (ToB) model to simulate quantum transport in nanowire MOSFETs in the ballistic regime. The presence of a proper Source/Drain barrier in the device is an important criterion for the applicability of the model. Long channel devices can be accurately modeled under low and high drain bias with DIBL adjustment.
- component; nanowires; top of the barrier; MOSFET; ballistic transport model; DIBL; tunneling current; top-of-the-barrier; subthreshold-slope; Tight-Binding; Short channel effects
Date of this Version5-27-2009
CitationIEEE Proceedings of the 13th International Workshop on Computational Electronics, Tsinghua University, Beijing, May 27-29, 2009
Citation InformationAbhijeet Paul, Saumitra Mehrotra, Gerhard Klimeck and Mathieu Luisier. "On the Validity of the Top of the Barrier Quantum Transport Model for Ballistic Nanowire MOSFETs" (2009)
Available at: http://works.bepress.com/gerhard_klimeck/195/