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On the Validity of the Top of the Barrier Quantum Transport Model for Ballistic Nanowire MOSFETs
Birck and NCN Publications
  • Abhijeet Paul, Purdue University - Main Campus
  • Saumitra Mehrotra, Purdue University - Main Campus
  • Gerhard Klimeck, Purdue University - Main Campus
  • Mathieu Luisier, Purdue University - Main Campus
Abstract

This work focuses on the determination of the valid device domain for the use of the Top of the barrier (ToB) model to simulate quantum transport in nanowire MOSFETs in the ballistic regime. The presence of a proper Source/Drain barrier in the device is an important criterion for the applicability of the model. Long channel devices can be accurately modeled under low and high drain bias with DIBL adjustment.

Keywords
  • component; nanowires; top of the barrier; MOSFET; ballistic transport model; DIBL; tunneling current; top-of-the-barrier; subthreshold-slope; Tight-Binding; Short channel effects
Date of this Version
5-27-2009
Citation
IEEE Proceedings of the 13th International Workshop on Computational Electronics, Tsinghua University, Beijing, May 27-29, 2009
Citation Information
Abhijeet Paul, Saumitra Mehrotra, Gerhard Klimeck and Mathieu Luisier. "On the Validity of the Top of the Barrier Quantum Transport Model for Ballistic Nanowire MOSFETs" (2009)
Available at: http://works.bepress.com/gerhard_klimeck/195/