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Multiscale Metrology and Optimization of Ultra-Scaled InAs Quantum Well FETs
IEEE Transactions on Electron Devices
  • Neerav Kharche, Rensselaer Polytechnic Institute
  • Gerhard Klimeck, NCN, Purdue University
  • Dae-Hyun Kim, Massachusetts Institute of Technology
  • Jesús A. del Alamo, Massachusetts Institute of Technology
  • Mathieu Luisier, NCN, Purdue University
Abstract
A simulation methodology for ultra-scaled InAs quantum well field effect transistors (QWFETs) is presented and used to provide design guidelines and a path to improve device performance. A multiscale modeling approach is adopted, where strain is computed in an atomistic valence-force-field method, an atomistic sp3d5s* tight-binding model is used to compute channel effective masses, and a 2-D real-space effective mass based ballistic quantum transport model is employed to simulate three terminal current-voltage characteristics including gate leakage. The simulation methodology is first benchmarked against experimental I-V data obtained from devices with gate lengths ranging from 30 to 50 nm. A good quantitative match is obtained. The calibrated simulation methodology is subsequently applied to optimize the design of a 20 nm gate length device. Two critical parameters have been identified to control the gate leakage magnitude of the QWFETs, (i) the geometry of the gate contact (curved or square) and (ii) the gate metal work function. In addition to pushing the threshold voltage towards an enhancement mode operation, a higher gate metal work function can help suppress the gate leakage and allow for much aggressive insulator scaling.
Comments

arXiv:1012.053662011

Neerav Kharche, Gerhard Klimeck, Dae-Hyun Kim, Jesús A. del Alamo, Mathieu Luisier. IEEE Transactions on Electron Devices (Volume: 58, Issue: 7, July 2011) 10.1109/TED.2011.2144986

Keywords
  • InAs,
  • InGaAs,
  • nonequilibrium Green’s function (NEGF),
  • nonparabolicity,
  • tight-binding,
  • Quantum well field effect transistor (QWFET),
  • high electron mobility transistor (HEMT)
Date of this Version
3-1-2011
DOI
10.1109/TED.2011.2144986
Citation
Neerav Kharche, Gerhard Klimeck, Dae-Hyun Kim, Jesús A. del Alamo, Mathieu Luisier. IEEE Transactions on Electron Devices (Volume: 58, Issue: 7, July 2011)
Citation Information
Neerav Kharche, Gerhard Klimeck, Dae-Hyun Kim, Jesús A. del Alamo, et al.. "Multiscale Metrology and Optimization of Ultra-Scaled InAs Quantum Well FETs" IEEE Transactions on Electron Devices (2011)
Available at: http://works.bepress.com/gerhard_klimeck/10/