Article
Evidence for Native-Defect Donors in n-Type ZnO
Physical Review Letters
Document Type
Article
Publication Date
11-1-2005
Disciplines
Abstract
Recent theory has found that native defects such as the O vacancy VO and Zn interstitial ZnI have high formation energies in n-type ZnO and, thus, are not important donors, especially in comparison to impurities such as H. In contrast, we use both theory and experiment to show that, under N ambient, the complex ZnI-NO is a stronger candidate than H or any other known impurity for a 30 meV donor commonly found in bulk ZnO grown from the vapor phase. Since the Zn vacancy is also the dominant acceptor in such material, we must conclude that native defects are important donors and acceptors in ZnO.
DOI
10.1103/PhysRevLett.95.225502
Citation Information
David C. Look, Gary C. Farlow, Pakpoom Reunchan, Sukit Limpijumnong, et al.. "Evidence for Native-Defect Donors in n-Type ZnO" Physical Review Letters Vol. 95 Iss. 22 (2005) ISSN: 0031-9007 Available at: http://works.bepress.com/gary_farlow/9/
The original publication is available at http://prl.aps.org/abstract/PRL/v95/i22/e225502