Other
Deep Centers in Conductive and Semi-Insulating GaN
SMIC-XIII: 2004 13th International Conference on Semiconducting & Insulating Materials
Document Type
Conference Proceeding
Publication Date
1-1-2004
Find this in a Library
Catalog Record
Disciplines
Abstract
Unintentionally doped conductive and carbon doped semi-insulating GaN films have been characterized by deep level transient spectroscopy, thermally stimulated current spectroscopy, and photoluminescence (PL). Based on correlations with dislocation density, point defects created by electron irradiation, and deep PL bands, the major traps in GaN can be tentatively associated with N vacancies, Ga vacancies, and N interstitials.
Citation Information
Z-Q. Fang, Gary C. Farlow, Bruce Claflin and C. Look. "Deep Centers in Conductive and Semi-Insulating GaN" SMIC-XIII: 2004 13th International Conference on Semiconducting & Insulating Materials (2004) p. 29 - 36 ISSN: 078038668X Available at: http://works.bepress.com/gary_farlow/13/
This paper is from the 13th International Conference on Semiconducting and Insulating Materials, September 20-25, 2004 in Beijing, China.