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Article
Spin Diffusion in Bulk GaN Measured with MnAs Spin Injector
Physical Review B
Abstract
Spin injection and precession in bulk wurtzite n-GaN with different doping densities are demonstrated with a ferromagnetic MnAs contact using the three-terminal Hanle measurement technique. Theoretical analysis using minimum fitting parameters indicates that the spin accumulation is primarily in the n-GaN channel rather than at the ferromagnet (FM)/semiconductor (SC) interface states. Spin relaxation in GaN is interpreted in terms of the D'yakonov-Perel mechanism, yielding a maximum spin lifetime of 44 ps and a spin diffusion length of 175 nm at room temperature. Our results indicate that epitaxial ferromagnetic MnAs is a suitable high-temperature spin injector for GaN.
Department(s)
Materials Science and Engineering
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2012 American Physical Society (APS), All rights reserved.
Publication Date
7-1-2012
Publication Date
01 Jul 2012
Disciplines
Citation Information
Shafat Jahangir, Fatih Dogan, Hyun Kum, Aurelien Manchon, et al.. "Spin Diffusion in Bulk GaN Measured with MnAs Spin Injector" Physical Review B (2012) ISSN: 2469-9950 Available at: http://works.bepress.com/fatih-dogan/182/