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Article
Novel, gain-flattened L-band EDFA with ASE utilization with > 40 nm 3 dB bandwidth
Microwave and Optical Technology Letters (2001)
  • Faisal Rafiq Mahamd Adikan, University of Malaya
Abstract
A simple gain-flattened L-band erbium-doped fiber amplifier (EDFA) is demonstrated, utilizing unwanted C-band amplified spontaneous emission (ASE) to enhance L-bulld gain performance. An L-band flat gain range of 50 nm (1560-1610 nm) is achieved for use in wavelength-division multiplexing (WDM) transmission systems. Gain flatness with a 3 dB gain discrepancy is obtained through manipulation of the pump power. (C) 2001 John Wiley & Sons, Inc.
Keywords
  • gain-flattened long band erbium-doped fiber amplifier optical amplifier doped fiber amplifiers broad-band wide-band
Publication Date
March, 2001
Publisher Statement
you can e-mail to me for the full text of my jurnal at rafiq@um.edu.my
Citation Information
Faisal Rafiq Mahamd Adikan. "Novel, gain-flattened L-band EDFA with ASE utilization with > 40 nm 3 dB bandwidth" Microwave and Optical Technology Letters Vol. 28 Iss. 6 (2001)
Available at: http://works.bepress.com/faisalrafiq_mahamdadikan/52/