Near-interface charged dislocations in AlGaN/GaN bilayer heterostructuresApplied Physics Letters
AbstractUnderstanding the behavior of semiconductor dislocation defects in AlGaN/GaN heterostructures is necessary in order to produce powerful and efficient transistors. This letter presents a straightforward technique to characterize dislocation defects with charges along their loops in a bilayer system. This is important regarding the behavior of near-interface dislocations in order to obtain an insight of the mechanical and physical responses. We characterize piezoelectric polarization and emphasize on the importance of dislocation-core electric charge. The results elaborate the variations of the dislocation force by the accumulation of charge and provide an explanation for the dominant dislocation types in nitride semiconductors.
Citation InformationAli Sangghaleh, Ernian Pan and X. Han. "Near-interface charged dislocations in AlGaN/GaN bilayer heterostructures" Applied Physics Letters Vol. 105 Iss. 10 (2014)
Available at: http://works.bepress.com/ernian_pan/10/