Article
Photoluminescence Modification by High-Order Photonic Bands in TiO2/ZnS:Mn Multilayer Inverse Opals
Applied Physics Letters
(2006)
Abstract
The formation of multilayered inverse opal photonic crystals by atomic layer deposition has been investigated, and shown to provide a flexible and precise technique to control the properties of photonic crystals. Inverse opals were formed by infiltration of SiO2 opal templates with conformal layers of ZnS:Mn and TiO2, followed by etching. The optical properties were further tuned by backfilling the structures with TiO2. The high-order band structure and its influence on the photoluminescent properties were studied and modification of the Cl− and Mn2+ emission peaks at 460 and 585 nm were demonstrated, respectively.
Keywords
- photoluminescence,
- photonic band gap,
- titanium compounds,
- zinc compounds,
- manganese,
- optical multilayers,
- atomic layer deposition,
- photonic crystals,
- silicon compounds,
- etching,
- band structure
Disciplines
Publication Date
February 20, 2006
Citation Information
Jeffrey S. King, Elton Graugnard and Christopher J. Summers. "Photoluminescence Modification by High-Order Photonic Bands in TiO2/ZnS:Mn Multilayer Inverse Opals" Applied Physics Letters Vol. 88 Iss. 8 (2006) Available at: http://works.bepress.com/elton_graugnard/23/