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Article
Photoluminescence Modification by High-Order Photonic Bands in TiO2/ZnS:Mn Multilayer Inverse Opals
Applied Physics Letters (2006)
  • Jeffrey S. King, Georgia Institute of Technology
  • Elton Graugnard, Georgia Institute of Technology
  • Christopher J. Summers, Georgia Institute of Technology
Abstract
The formation of multilayered inverse opal photonic crystals by atomic layer deposition has been investigated, and shown to provide a flexible and precise technique to control the properties of photonic crystals. Inverse opals were formed by infiltration of SiO2 opal templates with conformal layers of ZnS:Mn and TiO2, followed by etching. The optical properties were further tuned by backfilling the structures with TiO2. The high-order band structure and its influence on the photoluminescent properties were studied and modification of the Cl− and Mn2+ emission peaks at 460 and 585 nm were demonstrated, respectively.
Keywords
  • photoluminescence,
  • photonic band gap,
  • titanium compounds,
  • zinc compounds,
  • manganese,
  • optical multilayers,
  • atomic layer deposition,
  • photonic crystals,
  • silicon compounds,
  • etching,
  • band structure
Publication Date
February 20, 2006
Citation Information
Jeffrey S. King, Elton Graugnard and Christopher J. Summers. "Photoluminescence Modification by High-Order Photonic Bands in TiO2/ZnS:Mn Multilayer Inverse Opals" Applied Physics Letters Vol. 88 Iss. 8 (2006)
Available at: http://works.bepress.com/elton_graugnard/23/