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Sacrificial-Layer Atomic Layer Deposition for Fabrication of Non-Close-Packed Inverse-Opal Photonic Crystals
Advanced Functional Materials (2006)
  • Elton Graugnard, Georgia Institute of Technology
  • Jeffrey S. King, Georgia Institute of Technology
  • Davey P. Gaillot, Georgia Institute of Technology
  • Christopher J. Summers, Georgia Institute of Technology
Abstract
A method is presented for predicting and precisely controlling the structure of photonic crystals fabricated using sacrificial-layer atomic layer deposition. This technique provides a reliable method for fabrication of high-quality non-close-packed inverse shell opals with large static tunability and precise structural control. By using a sacrificial layer during opal infiltration, the inverse-opal pore size can be increased with sub-nanometer resolution and without distorting the lattice to allow for a high degree of dielectric backfilling and increased optical tunability. For a 10 % sacrificial layer, static tunability of 80 % is predicted for the inverse opal. To illustrate this technique, SiO2 opal templates were infiltrated using atomic layer deposition of ZnS, Al2O3, and TiO2. Experimentally, a static tunability of over 600 nm, or 58 %, was achieved and is well described by both a geometrical model and a numerical-simulation algorithm. When extended to materials of higher refractive index, this method will allow the facile fabrication of 3D photonic crystals with optimized photonic bandgaps.
Keywords
  • Atomic layer deposition,
  • Inverse opals,
  • non-close-packed,
  • Photonic crystals
Publication Date
June 1, 2006
Citation Information
Elton Graugnard, Jeffrey S. King, Davey P. Gaillot and Christopher J. Summers. "Sacrificial-Layer Atomic Layer Deposition for Fabrication of Non-Close-Packed Inverse-Opal Photonic Crystals" Advanced Functional Materials Vol. 16 Iss. 9 (2006)
Available at: http://works.bepress.com/elton_graugnard/22/