Article
The Role of Nucleation and Heteroepitaxial Processes in Nanostructuring of Si
Journal of Electronic Materials
Document Type
Article
Publication Date
5-1-2002
Abstract
Self-assembly represents a large prospective class of nanoscale fabrication techniques for future electronics. Understanding the mechanisms underlying the processes of nanostructure formation is crucial for establishing the control over their dimensions, spatial distribution, and uniformity. In this work, nanostructuring of Si was studied by silicon heteroepitaxy on NiSi2 nucleated at the Ni/Si interface during low-temperature Si sputtering on a thin Ni prelayer. The formation of spatially separated Si wires is discussed in terms of nucleation phenomenon, strain relaxation in the lattice-matched systems, and Si deposition kinetics.
Inclusive pages
466-471
ISBN/ISSN
0361-5235
Copyright
Copyright © 2002, Springer
Publisher
Springer
Peer Reviewed
Yes
Disciplines
Citation Information
Elena A. Guliants, Chunhai Ji and Wayne A. Anderson. "The Role of Nucleation and Heteroepitaxial Processes in Nanostructuring of Si" Journal of Electronic Materials Vol. 31 Iss. 5 (2002) Available at: http://works.bepress.com/elena_guliants/37/
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