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Article
Spm Oxidation and Parallel Writing on Zirconium Nitride Thin Films
Journal of Vacuum Science & Technology A
  • N. Farkas
  • J. R. Comer
  • G. Zhang
  • Edward A. Evans, University of Akron Main Campus
  • R. D. Ramsier
  • J. A. Dagata
Document Type
Article
Publication Date
7-1-2005
Disciplines
Abstract
Systematic investigation of the SPM oxidation process of sputter-deposited ZrN thin films is reported. During the intrinsic part of the oxidation, the density of the oxide increases until the total oxide thickness is approximately twice the feature height. Further oxide growth is sustainable as the system undergoes plastic flow followed by delamination from the ZrN-silicon interface keeping the oxide density constant. ZrN exhibits superdiffusive oxidation kinetics in these single tip SPM studies. We extend this work to the fabrication of parallel oxide patterns 70 nm in height covering areas in the square centimeter range. This simple, quick, and well-controlled parallel nanolithographic technique has great potential for biomedical template fabrication. (c) 2005 American Vacuum Society.
Citation Information
N. Farkas, J. R. Comer, G. Zhang, Edward A. Evans, et al.. "Spm Oxidation and Parallel Writing on Zirconium Nitride Thin Films" Journal of Vacuum Science & Technology A Vol. 23 Iss. 4 (2005) p. 846 - 850
Available at: http://works.bepress.com/edward_evans/9/