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Article
Parallel Writing on Zirconium Nitride Thin Films by Local Oxidation Nanolithography
Applied Physics Letters
  • N. Farkas
  • J. R. Comer
  • G. Zhang
  • Edward A. Evans, University of Akron Main Campus
  • R. D. Ramsier
  • S. Wight
  • J. A. Dagata
Document Type
Article
Publication Date
12-6-2004
Disciplines
Abstract

Parallel pattern transfer of submicrometer-scale oxide features onto zirconium nitride thin films is reported. The oxidation reaction was verified by Auger microprobe analysis and secondary ion mass spectrometry. Oxide features of similar to70 nm in height can be formed and selectively etched in a dilute aqueous hydrogen fluoride solution. This provides an interesting route to potential new applications for high-melting point, biocompatible surfaces that possess small feature sizes with controlled geometries. (C) 2004 American Institute of Physics.

Citation Information
N. Farkas, J. R. Comer, G. Zhang, Edward A. Evans, et al.. "Parallel Writing on Zirconium Nitride Thin Films by Local Oxidation Nanolithography" Applied Physics Letters Vol. 85 Iss. 23 (2004) p. 5691 - 5693
Available at: http://works.bepress.com/edward_evans/4/