High-voltage Parallel Writing on Iron Nitride Thin FilmsJournal of Vacuum Science & Technology A
AbstractWe report large area patterning of sputter-deposited FeN thin films by a high-voltage parallel writing technique that was recently developed to modify ZrN surfaces. Systematically patterned 15-100-nm-thick FeN films consisting of features with well-defined sizes and shapes are obtained by applying high dc voltages between a stamp and the samples. During the process the oxide dissolves, exposing the substrate beneath. This controlled breakdown eliminates the need for any postexposure etching. The single-step imprinting method presented here provides an emerging route to fabricate isolated FeN geometrical structures on silicon substrates for magnetic applications. (c) 2006 American Vacuum Society.
Citation InformationN. Farkas, J. D. Ehrman, Edward A. Evans, R. D. Ramsier, et al.. "High-voltage Parallel Writing on Iron Nitride Thin Films" Journal of Vacuum Science & Technology A Vol. 24 Iss. 4 (2006) p. 1340 - 1343
Available at: http://works.bepress.com/edward_evans/1/