Article
Algorithm for Extracting Parameters of the Coupling Capacitance Hysteresis Cycle for TSV Transient Modeling and Robustness Analysis
IEEE Transactions on Electromagnetic Compatibility
Abstract
This paper explains the extraction from the measurement of the parameters necessary in time domain to identify the hysteretic behavior of the coupling capacitance of through silicon vias (TSVs). The algorithm was developed in such a way that the equivalent capacitance model can be implemented into standard circuit simulators. A comparison with a known procedure based on the genetic algorithm approach is offered as validation. Results showing the robustness of the algorithm and the effects of the hysteresis on the crosstalk among TSV and integrated circuit active devices are reported and discussed.
Department(s)
Electrical and Computer Engineering
Research Center/Lab(s)
Electromagnetic Compatibility (EMC) Laboratory
Keywords and Phrases
- Capacitance,
- Circuit simulation,
- Electronics packaging,
- Genetic algorithms (GA),
- Hysteresis,
- Parameter estimation,
- Reconfigurable hardware,
- Circuit simulators,
- Coupling capacitance,
- Equivalent capacitance,
- Extracting parameter,
- Genetic algorithm approach,
- Hysteretic behavior,
- Robustness analysis,
- Through silicon vias (TSVs),
- Three dimensional integrated circuits,
- Active devices,
- Dielectric hysteresis,
- Equivalent circuit modeling,
- Nonlinear effects,
- Signal integrity,
- Time domain
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2017 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
Publication Date
11-1-2017
Publication Date
01 Nov 2017
Disciplines
Citation Information
Stefano Piersanti, E. Pellegrino, Francesco De Paulis, Antonio Orlandi, et al.. "Algorithm for Extracting Parameters of the Coupling Capacitance Hysteresis Cycle for TSV Transient Modeling and Robustness Analysis" IEEE Transactions on Electromagnetic Compatibility Vol. 59 Iss. 4 (2017) p. 1329 - 1338 ISSN: 0018-9375; 1558-187X Available at: http://works.bepress.com/donghyun-bill-kim/2/