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Lithography on GaP(100) surfaces
Birck and NCN Publications
  • Rosangelly Flores-Perez, Purdue University - Main Campus
  • Dmitry Zemlyanov, Birck Nanotechnology Center, Purdue University
  • Albena Ivanisevic, Birck Nanotechnology Center, Purdue University
Abstract

Two types of lithographic methods were used to modify GaP(1 00) surfaces with commercially available alkanethiol molecules: microcontact printing (mu CP) and "dip-pen" nanolithography (DPN), The patterned surfaces were characterized by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared reflection absorption spectroscopy (FT-IRRAS). The characterization was done in order to understand the quality of each type of pattern, its chemical composition, and the organization of the molecules on the surface. Differences between the two lithographic methods used to do lithography on the GaP(1 00) in this study were dependent on the chosen molecular "ink".

Keywords
  • DIP-PEN NANOLITHOGRAPHY; ALKANETHIOL MONOLAYERS; SEMICONDUCTOR SURFACES; GAAS-SURFACES; X-RAY; MOLECULES; PEPTIDES; XPS; SPECTROSCOPY; GAAS(001)
Date of this Version
6-1-2008
Citation
Surface Science 602 (2008) 1993–1998
Citation Information
Rosangelly Flores-Perez, Dmitry Zemlyanov and Albena Ivanisevic. "Lithography on GaP(100) surfaces" (2008)
Available at: http://works.bepress.com/dmitry_zemlyanov/7/