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Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited HfO2/Al2O3 nanolaminate gate dielectric
Birck and NCN Publications
  • T Yang, Purdue University
  • Y Xuan, Purdue University
  • Dmitry Zemlyanov, Purdue University
  • T Shen, Purdue University
  • Y Q Wu, Purdue University
  • Jerry M Woodall, Birck Nanotechnology Center, Purdue University
  • P. D. Ye, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University
  • F S Aguirre-Tostado, Materials Science and Engineering, University of Texas at Dallas
  • M Milojevic, Materials Science and Engineering, University of Texas at Dallas
  • S McDonnell, Materials Science and Engineering, University of Texas at Dallas
  • R M Wallace, Materials Science and Engineering, University of Texas at Dallas
Abstract

A systematic capacitance-voltage study has been performed on GaAs metal-oxide-semiconductor (MOS) structures with atomic-layer-deposited HfO2/Al2O3 nanolaminates as gate dielectrics. A HfO2/Al2O3 nanolaminate gate dielectric improves the GaAs MOS characteristics such as dielectric constant, breakdown voltage, and frequency dispersion. A possible origin for the widely observed larger frequency dispersion on n-type GaAs than p-type GaAs is discussed. Further experiments show that the observed hysteresis is mainly from the mobile changes and traps induced by HfO2 in bulk oxide instead of those at oxide/GaAs interface.

Date of this Version
10-1-2007
Citation
APPLIED PHYSICS LETTERS 91, 142122 2007
Citation Information
T Yang, Y Xuan, Dmitry Zemlyanov, T Shen, et al.. "Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited HfO2/Al2O3 nanolaminate gate dielectric" (2007)
Available at: http://works.bepress.com/dmitry_zemlyanov/25/