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Large-scale graphitic thin films synthesized on Ni and transferred to insulators: Structural and electronic properties
Birck and NCN Publications
  • Helin Cao, Purdue University - Main Campus
  • Qingkai Yu, University of Houston - Main
  • Robert Colby, Purdue University
  • Deepak Pandey, Purdue University - Main Campus
  • C S Park, SEMATECH
  • Jie Lian, Rensselaer Polytechnic Institute
  • Dmitry Zemlyanov, Purdue University - Main Campus
  • Isaac Childres, Purdue University - Main Campus
  • V. P. Drachev, Birck Nanotechnology Center, School of Electrical and Computer Engineering, Purdue University
  • E A Stach, Birck Nanotechnology Center and School of Materials Engineering, Purdue University
  • Muhammad Hussain, SEMATECH
  • Hao Li, University of Missouri - Columbia
  • Steven S Pei, University of Houston - Main
  • Yong P Chen, Purdue University - Main Campus
We present a comprehensive study of the structural and electronic properties of ultrathin films containing graphene layers synthesized by chemical vapor deposition based surface segregation on polycrystalline Ni foils then transferred onto insulating SiO2/Si substrates. Films of size up to several mm's have been synthesized. Structural characterizations by atomic force microscopy, scanning tunneling microscopy, cross-sectional transmission electron microscopy (XTEM), and Raman spectroscopy confirm that such large-scale graphitic thin films (GTF) contain both thick graphite regions and thin regions of few-layer graphene. The films also contain many wrinkles, with sharply-bent tips and dislocations revealed by XTEM, yielding insights on the growth and buckling processes of the GTF. Measurements on mm-scale back-gated transistor devices fabricated from the transferred GTF show ambipolar field effect with resistance modulation similar to 50% and carrier mobilities reaching similar to 2000 cm(2)/V s. We also demonstrate quantum transport of carriers with phase coherence length over 0.2 mu m from the observation of two-dimensional weak localization in low temperature magnetotransport measurements. Our results show that despite the nonuniformity and surface roughness, such large-scale, flexible thin films can have electronic properties promising for device applications.
  • atomic force microscopy; buckling; carrier mobility; CVD coatings; dislocations; field effect transistors; flexible electronics; galvanomagnetic effects; graphene; graphite; Raman spectra; scanning tunnelling microscopy; surface roughness; surface segregation; transmission electron microscopy; weak localisation,
Date of this Version
DOI: 10.1063/1.3309018
Citation Information
Helin Cao, Qingkai Yu, Robert Colby, Deepak Pandey, et al.. "Large-scale graphitic thin films synthesized on Ni and transferred to insulators: Structural and electronic properties" (2010)
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