AFM study of ridges in few-layer epitaxial graphene grown on the carbon-face of 4H-SiC(000(1)over-bar)Carbon
AbstractA characterization of the graphitic overlayer that forms on 4H-SiC(000 (1) over bar) substrates heated for ten minutes to temperatures T > 1350 degrees C under vacuum conditions has been performed. X-ray photoelectron spectroscopy of the C-face reveals the presence of graphitic carbon with a thickness that increases with growth temperature. Parallel atomic force microscope (AFM) studies find a mesh-like network of ridges with high curvature that bound atomically flat, tile-like facets of few-layer graphene (FLG). By imaging the network that develops on FLG, it is possible to map out the regions where the elastic energy is concentrated.
- BUCKLING DYNAMICS; ELASTIC MEMBRANES; THERMAL-EXPANSION; GRAPHITE; SURFACE; FILMS; GRAPHITIZATION; 6H-SIC(0001); TEMPERATURE; SHEETS
Date of this Version8-1-2010
CitationCarbon Volume 48, Issue 9, August 2010, Pages 2383–2393
Citation InformationGyan Prakash, Michael A Capano, Michael Bolen, Dmitry Zemlyanov, et al.. "AFM study of ridges in few-layer epitaxial graphene grown on the carbon-face of 4H-SiC(000(1)over-bar)" Carbon (2010)
Available at: http://works.bepress.com/dmitry_zemlyanov/13/