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Article
Integrated VCO With Up/Down Converter for Si-Based 60 GHz WPAN Applications
IEEE Microwave and Wireless Components Letters
  • P. Sen
  • S. Sarkar
  • Debasis Dawn, University of Washington Tacoma
  • S. Pinel
  • J. Laskar
Publication Date
2-1-2008
Document Type
Article
Abstract

This letter presents the design and implementation of the largest reported bandwidth of a 60 GHz up/down converter with an integrated voltage controlled oscillator (VCO) in a low-cost 0.18 mum silicon-germanium process. The up/down conversion is achieved using the 2X sub-harmonic passive mixing with anti-parallel diode pairs. A 30 GHz cross-coupled VCO is designed, optimized and integrated with the sub-harmonic mixer through a cascode amplifier to meet the local oscillator power requirements. The fully integrated chip takes only 1.5 mm2 of silicon die area and consumes only 40 mW of dc power for a measured conversion loss of 12 dB at 61.5 GHz. The integrated up/down converter is measured to have greater than 9 GHz double-sided 3-dB RF bandwidth suitable for wideband high data-rate WPAN transceiver requirements. The VCO and VCO-amplifier test structures are separately fabricated and measured to have a phase noise as low as -105 dBc/Hz at 1 MHz offset with a tuning range of 2.3 GHz.

DOI
10.1109/LMWC.2007.915140
Publisher Policy
pre print, post print
Citation Information
P. Sen, S. Sarkar, Debasis Dawn, S. Pinel, et al.. "Integrated VCO With Up/Down Converter for Si-Based 60 GHz WPAN Applications" IEEE Microwave and Wireless Components Letters Vol. 18 Iss. 2 (2008) p. 139 - 141
Available at: http://works.bepress.com/debasis-dawn/41/