Article
Fully Integrated LTE-Advanced Band-Switchable High-Gain CMOS Power Amplifier
School of Engineering and Technology Publications
Publication Date
5-1-2017
Document Type
Conference Proceeding
Abstract
This paper presents a fully integrated multiband high gain CMOS tunable power amplifier (PA) for 760-960 MHz, 1.3-1.6 GHz, 1.7-2.34 GHz, 2.35-2.81 GHz, thus, covering 33 Long Term Evolution-advanced (LTE-a) bands for cellular applications. The 3 mm × 1.5 mm PA chip fabricated using 0.13 um CMOS process exhibits peak output power of 21 dBm / 23.2 dBm / 21 dBm / 23 dBm with maximum gain of 34 dB / 42 dB/ 42 dB/ 40 dB.
DOI
10.1109/EIT.2017.8053400
Citation Information
Palash Roy, S Babak Hamidi and Debasis Dawn. "Fully Integrated LTE-Advanced Band-Switchable High-Gain CMOS Power Amplifier" (2017) p. 431 - 435 Available at: http://works.bepress.com/debasis-dawn/36/