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Article
Fully Integrated CMOS Power Amplifier Using Resistive Current Combining Technique
IET Microwaves, Antennas, and Propagation
  • Palash Roy
  • Debasis Dawn, University of Washington Tacoma
Publication Date
12-4-2017
Document Type
Article
Abstract

This study presents a fully integrated complementary metal oxide semiconductor (CMOS) power amplifier (PA) covering LTE-advanced bands from 825 to 915 MHz for cellular application and the bands of 978 MHz universal access transceiver mode and 1090 MHz extended squitter mode of an automatic dependent surveillance-broadcast transmitter for the unmanned aircraft system. The 3.63 mm × 0.95 mm PA including all on-chip input and output matching networks, fabricated using the 0.18 μm CMOS process exhibits peak output power of 24 dBm, modulated output power of >22 dBm at 978 MHz, the maximum power gain of 27 dB and bandwidth of 290 MHz.

DOI
10.1049/iet-map.2017.0370
Publisher Policy
pre print, post print
Citation Information
Palash Roy and Debasis Dawn. "Fully Integrated CMOS Power Amplifier Using Resistive Current Combining Technique" IET Microwaves, Antennas, and Propagation Vol. 12 Iss. 5 (2017) p. 826 - 832
Available at: http://works.bepress.com/debasis-dawn/35/