"The Photoassisted MOVPE Growth of ZnSe(n)/GaAs(p+) Solar Cells" by David W Parent

Article

The Photoassisted MOVPE Growth of ZnSe(n)/GaAs(p+) Solar Cells

Solid-State Electronics (2003)

David W Parent, San Jose State University
A Rodriguez, University of Connecticut
J E Ayers, University of Connecticut
F C Jaine, University of Connecticut

Abstract

We report the electrical characteristics of (n)ZnSe/(p+)GaAs heterostructure solar cells grown by depositing an n-type ZnSe epilayer using photoassisted metal organic vapor phase epitaxy on p+ type GaAs (1 0 0) substrates. A study of the solar cell efficiency as a function of ZnSe epilayer thickness is also presented. Our preliminary results show that an epilayer thickness of 1.5 μm produced the highest efficiency for the cells tested, (4.27% under AM1.5 conditions, no anti-reflective coating). We also demonstrate a method to pattern ZnSe/GaAs structures with an inexpensive methanol/bromine etch process.

Disciplines

Publication Date

2003

Publisher Statement

SJSU users: use the following link to login and access the article via SJSU databases

Citation Information

David W Parent, A Rodriguez, J E Ayers and F C Jaine. "The Photoassisted MOVPE Growth of ZnSe(n)/GaAs(p+) Solar Cells" Solid-State Electronics (2003)
Available at: http://works.bepress.com/david_parent/7/