Article
Improvements to a Microelectronic Design and Fabrication Course
IEEE Transactions on Education
(2005)
Abstract
This paper presents improvements made to a complimentary metal–oxide–semiconductor (CMOS) fabrication laboratory course to increase student learning and student impact (enrollment). The three main improvements to the course discussed include: 1) use of a two-mask MOS process that significantly reduced the time students took previously to design, fabricate, and verify the electrical properties of a metal–oxide–semiconductor field-effect transistor (MOSFET) process; 2) students' use of a semicustom integrated circuit (IC) design that significantly reduced the average design and processing time of previous years; and 3) development and implementation of a system of course prerequisites, which allowed a larger number of students to enroll in the course.
Disciplines
Publication Date
August, 2005
DOI
10.1109/TE.2005.849761
Publisher Statement
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Citation Information
David W Parent, Eric J Basham, Yasser Dessouky, Stacy H. Gleixner, et al.. "Improvements to a Microelectronic Design and Fabrication Course" IEEE Transactions on Education Vol. 48 Iss. 3 (2005) p. 497 - 502 ISSN: 0018-9359 Available at: http://works.bepress.com/david_parent/6/