Article
High-k dielectric fabrication process to minimize mobile ionic penetration
Proceedings of the Annual International Conference of the IEEE Engineering in Medicine and Biology (EMBC)
(2010)
Abstract
A process for fabricating hafnium oxide (HfO) films to minimize ionic penetration was developed and tested. A 333Å HfO film was successfully deposited by thermal evaporation. The film was characterized through capacitance versus time (C-T) and capacitance versus voltage (C-V) measurements. The films were exposed to a solution of 0.1M NaCl physiological saline and preliminary results showed that the ionic species did not alter the electrical characteristics. The relative effective dielectric constant of the hafnium oxide layer and SiO 2interfacial layer was 10.5, while the relative dielectric constant of the hafnium oxide layer was 18.
Publication Date
2010
DOI
10.1109/IEMBS.2010.5627801
Publisher Statement
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Citation Information
David W Parent, Janet Davis and Eric J Basham. "High-k dielectric fabrication process to minimize mobile ionic penetration" Proceedings of the Annual International Conference of the IEEE Engineering in Medicine and Biology (EMBC) (2010) ISSN: 1558-4615 Available at: http://works.bepress.com/david_parent/39/