Article
Compact digital implementation of a quadratic integrate-and-fire neuron
Proceedings of the 31st Annual Engineering in Medicine and Biology Society (EMBC) Conference
(2012)
Abstract
A design methodology is presented that uses 1-D process simulations of metal insulator semiconductor (MIS) structures to design the threshold voltage of hafnium oxide based transistors used for neural recording. The methodology is comprised of 1-D analytical equations for threshold voltage specification, and doping profiles, and 1-D MIS technical computer aided design (TCAD) to design a process to implement a specific threshold voltage, which minimized simulation time. The process was then verified with a 2-D process/electrical TCAD simulation. Hafnium oxide films (HfO) were grown and characterized for dielectric constant and fixed oxide charge for various annealing temperatures, two important design variables in threshold voltage design.
Disciplines
Publication Date
2012
DOI
10.1109/EMBC.2012.6346731
Publisher Statement
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Citation Information
Eric J Basham and David W Parent. "Compact digital implementation of a quadratic integrate-and-fire neuron" Proceedings of the 31st Annual Engineering in Medicine and Biology Society (EMBC) Conference (2012) ISSN: 1558-4615 Available at: http://works.bepress.com/david_parent/15/