We have conducted a study of the electrical and photoluminescence properties of ZnSe films grown by photoassisted metalorganic vapor phase epitaxy (MOVPE) (250 Torr, 400°C) with ethyl iodide and hydrogen chloride as n-type dopant sources. A higher peak electron concentration and a lower minimum resistivity were observed using hydrogen chloride (5.4 × 1018 cm−3, and .0070 ohm-cm, respectively), as opposed to ethyl iodide (1.55 × 1017 cm −3, and 0.067 ohm-cm, respectively). We show that the higher electron concentrations observed in the chlorine doped layers are due to a higher incorporation of chlorine atoms than that of iodine atoms, and that this may be a result of the different tetrahedral misfit factors for these atoms. Our photoluminescence and 77K Hall effect data support this conclusion. Growth rate depression was observed to be more severe for iodine doped layers than for chlorine doped layers. Thus, it appears that hydrogen chloride is a superior dopant source for low-temperature photoassisted MOVPE ZnSe growth of n-type layers for blue-green laser diodes in the pressure-temperature regime investigated.