Article
Electron-Core-Hole Interaction in GaAsP
Physical Review Letters
Document Type
Article
Disciplines
Publication Date
9-1-1980
DOI
10.1103/PhysRevLett.45.1032
Abstract
The electron-core-hole interaction is studied via energy derivative reflectance spectra of 20-eV transitions from Ga 3dcore levels to lower conduction-band final states in GaAs1−xPx alloys. A two-level anticrossing behavior of line shapes and threshold energies as the relative positions of the L and X minima invert yields a previously unanticipated L−Xmixing energy |VLX|∼50 meV.
Copyright Owner
The American Physical Society
Copyright Date
1980
Language
en
File Format
application/pdf
Citation Information
S. M. Kelso, D. E. Aspnes, C. G. Olson, David W. Lynch, et al.. "Electron-Core-Hole Interaction in GaAsP" Physical Review Letters Vol. 45 Iss. 12 (1980) p. 1032 - 1035 Available at: http://works.bepress.com/david_lynch1/96/
This article is from Physical Review Letters 45 (1980): 1032, doi:10.1103/PhysRevLett.45.1032. Posted with permission.