Article
Direct Determination of Sizes of Excitations from Optical Measurements on Ion-Implanted GaAs
Physical Review Letters
Document Type
Article
Disciplines
Publication Date
6-1-1982
DOI
10.1103/PhysRevLett.48.1863
Abstract
Using a simple model that describes the decrease of the amplitudes of optical structures in ion-implanted crystals, projected areas of several valence and core excitons in GaAs are determined. The last remnant of crystal-related optical structure vanishes for crystallite areas less than (16Å)2.
Copyright Owner
The American Physical Society
Copyright Date
1982
Language
en
File Format
application/pdf
Citation Information
D. E. Aspnes, S. M. Kelso, C. G. Olson and David W. Lynch. "Direct Determination of Sizes of Excitations from Optical Measurements on Ion-Implanted GaAs" Physical Review Letters Vol. 48 Iss. 26 (1982) p. 1863 - 1866 Available at: http://works.bepress.com/david_lynch1/77/
This article is from Physical Review Letters 48 (1982): 1863, doi:10.1103/PhysRevLett.48.1863. Posted with permission.