10-30-eV optical properties of GaNPhysical Review B
AbstractThe reflectance of basal-plane epitaxial layers of GaN has been measured between 5 and 30 eV, and Kramers-Kronig analyzed to get the dielectric function and the electron-energy-loss function. The second derivative of the reflectance with respect to energy was obtained in the region of Ga 3d→ conduction-band excitations. The latter show weak structure from transitions to Γ final states and stronger structures to final states along U, both split by the 0.40-eV Ga 3d spin-orbit splitting. The loss function exhibits two peaks, the stronger one at 19.0 eV, below the expected 23.3 eV, while the weaker one is at 23.2 eV.
Copyright OwnerThe American Physical Society
Citation InformationC. G. Olson, David W. Lynch and A. Zehe. "10-30-eV optical properties of GaN" Physical Review B Vol. 24 Iss. 8 (1981) p. 4629 - 4633
Available at: http://works.bepress.com/david_lynch1/112/
This article is from Physical Review B 24 (1981): 4629, doi:10.1103/PhysRevB.24.4629. Posted with permission.