Article
High Acceptor Production Rate in Electron-Irradiated N-Type GaAs - Impact on Defect Models
Applied Physics Letters
Document Type
Article
Publication Date
9-1-1987
Disciplines
Abstract
Defect production rates have been studied in electron-irradiated GaAs by temperature-dependent Hall-effect (TDR) measurements. The TDH results agree well with deep level transient spectroscopy (DLTS) results for the wen-known electron traps E1, E2, and E3, but conclusively demonstrate a much higher production rate (4 ± 1 cm-1) of acceptors below E3 than the total of all other DLTS traps. These findings strongly affect current defect models, and, e.g., are consistent with the existence of Ga sublattice damage, not seen before.
DOI
10.1063/1.98831
Citation Information
David C. Look. "High Acceptor Production Rate in Electron-Irradiated N-Type GaAs - Impact on Defect Models" Applied Physics Letters Vol. 51 Iss. 11 (1987) p. 843 - 845 ISSN: 0003-6951 Available at: http://works.bepress.com/david_look/99/
Copyright © 1987, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 51.11, and may be found at http://apl.aip.org/resource/1/applab/v51/i11/p843_s1.