Article
Highly Conductive ZnO Grown by Pulsed Laser Deposition in Pure Ar
Applied Physics Letters
Document Type
Article
Publication Date
8-1-2010
Disciplines
Abstract
Ga-doped ZnO was deposited by pulsed laser deposition at 200 °C on SiO2/Si, Al2O3, or quartz in 10 mTorr of pure Ar. The as-grown, bulk resistivity at 300 K is 1.8×10−4 Ω cm, three-times lower than that of films deposited at 200 °C in 10 mTorr of O2 followed by an anneal at 400 °C in forming gas. Furthermore, depth uniformity of the electrical properties is much improved. Mobility analysis shows that this excellent resistivity is mostly due to an increase in donor concentration, rather than a decrease in acceptor concentration. Optical transmittance is approximately 90% in the visible and near-IR spectral regions.
DOI
10.1063/1.3481372
Citation Information
Robin C. Scott, Kevin D. Leedy, Burhan Bayraktaroglu, David C. Look, et al.. "Highly Conductive ZnO Grown by Pulsed Laser Deposition in Pure Ar" Applied Physics Letters Vol. 97 Iss. 7 (2010) ISSN: 0003-6951 Available at: http://works.bepress.com/david_look/98/
Copyright © 2010, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 97.7, and may be found at http://apl.aip.org/resource/1/applab/v97/i7/p072113_s1