Article
Si Doping of High-Al-Mole Fraction AlxGa1-xN Alloys with rf Plasma-Induced Molecular-Beam-Epitaxy
Applied Physics Letters
Document Type
Article
Publication Date
12-1-2002
Disciplines
Abstract
Very high levels of n-type doping of AlxGa1−xN alloys were recently achieved by rf plasma-induced molecular-beam epitaxy on sapphire substrates and Si as a dopant. Electron concentrations were obtained up to 1.25×1020 cm−3 when the Al mole fraction was 50%, and 8.5×1019 cm−3 electrons were measured even when the Al mole fraction was 80%. Other material properties were determined by optical absorption, photoluminescence, cathodoluminescence, x-ray diffraction, and atomic force microscopy measurements and high optical and morphological qualities were shown.
DOI
10.1063/1.1534395
Citation Information
Jeonghyun Hwang, William J. Schaff, Lester F. Eastman, Shawn T. Bradley, et al.. "Si Doping of High-Al-Mole Fraction AlxGa1-xN Alloys with rf Plasma-Induced Molecular-Beam-Epitaxy" Applied Physics Letters Vol. 81 Iss. 27 (2002) p. 5192 - 5194 ISSN: 0003-6951 Available at: http://works.bepress.com/david_look/91/
Copyright © 2002, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 81.27, and may be found at http://apl.aip.org/resource/1/applab/v81/i27/p5192_s1