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Article
High Quality Interfaces in GaAs-Alas Quantum Wells Determined from High Resolution Photoluminescence
Journal of Vacuum Science & Technology B
  • D. C. Reynolds
  • David C. Look, Wright State University - Main Campus
  • B. Jogai
  • R. Kaspi
  • K. R. Evans
  • M. Estes
Document Type
Article
Publication Date
9-1-1997
Comments

Copyright © 1997, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in 15.5, and may be found at http://avspublications.org/jvstb/resource/1/jvtbd9/v15/i5/p1703_s1

DOI
10.1116/1.589358
Citation Information
D. C. Reynolds, David C. Look, B. Jogai, R. Kaspi, et al.. "High Quality Interfaces in GaAs-Alas Quantum Wells Determined from High Resolution Photoluminescence" Journal of Vacuum Science & Technology B Vol. 15 Iss. 5 (1997) p. 1703 - 1706 ISSN: 1071-1023
Available at: http://works.bepress.com/david_look/90/